Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.18 A
Maximum Drain Source Voltage
20 V
Serie
OptiMOS P
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Latime
1.3mm
Lungime
2.9mm
Typical Gate Charge @ Vgs
3.6 nC @ 4.5 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 270,00
€ 0,09 Buc. (Pe o rola de 3000) (fara TVA)
€ 321,30
€ 0,107 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 270,00
€ 0,09 Buc. (Pe o rola de 3000) (fara TVA)
€ 321,30
€ 0,107 Buc. (Pe o rola de 3000) (cu TVA)
3000
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.18 A
Maximum Drain Source Voltage
20 V
Serie
OptiMOS P
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Latime
1.3mm
Lungime
2.9mm
Typical Gate Charge @ Vgs
3.6 nC @ 4.5 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.