Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.41mm
Latime
4.7mm
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
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Impachetare pentru productie (Banda)
1
€ 1,35
Each (Supplied as a Tape) (fara TVA)
€ 1,61
Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 1,35 |
10 - 49 | € 1,09 |
50 - 99 | € 1,03 |
100 - 249 | € 0,95 |
250+ | € 0,88 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.41mm
Latime
4.7mm
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs