Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Serie
TrenchFET
Tip pachet
SC-70-6L
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 7,40
€ 0,74 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,81
€ 0,881 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 7,40
€ 0,74 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,81
€ 0,881 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,74 | € 7,40 |
50 - 90 | € 0,66 | € 6,60 |
100 - 490 | € 0,62 | € 6,20 |
500 - 990 | € 0,58 | € 5,80 |
1000+ | € 0,51 | € 5,10 |
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Serie
TrenchFET
Tip pachet
SC-70-6L
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China