Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
4.7mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Inaltime
15.85mm
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
4.7mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Inaltime
15.85mm
Tara de origine
China