Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
1
Transistor Material
Silicon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,04
Buc. (Intr-un pachet de 250) (fara TVA)
€ 0,048
Buc. (Intr-un pachet de 250) (cu TVA)
Standard
250
€ 0,04
Buc. (Intr-un pachet de 250) (fara TVA)
€ 0,048
Buc. (Intr-un pachet de 250) (cu TVA)
Standard
250
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
250 - 250 | € 0,04 | € 10,00 |
500 - 750 | € 0,04 | € 10,00 |
1000 - 1250 | € 0,03 | € 7,50 |
1500 - 2750 | € 0,03 | € 7,50 |
3000+ | € 0,03 | € 7,50 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
1
Transistor Material
Silicon