Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Serie
NexFET
Tip pachet
VSON-CLIP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 12,60
€ 2,52 Buc. (Intr-un pachet de 5) (fara TVA)
€ 14,99
€ 2,999 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 12,60
€ 2,52 Buc. (Intr-un pachet de 5) (fara TVA)
€ 14,99
€ 2,999 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,52 | € 12,60 |
25 - 45 | € 2,37 | € 11,85 |
50 - 120 | € 2,11 | € 10,55 |
125 - 245 | € 1,88 | € 9,40 |
250+ | € 1,77 | € 8,85 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Serie
NexFET
Tip pachet
VSON-CLIP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Detalii produs