Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Serie
STripFET II
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.3mm
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 106,00
€ 2,12 Each (In a Tube of 50) (fara TVA)
€ 126,14
€ 2,523 Each (In a Tube of 50) (cu TVA)
50
€ 106,00
€ 2,12 Each (In a Tube of 50) (fara TVA)
€ 126,14
€ 2,523 Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,12 | € 106,00 |
100 - 450 | € 1,79 | € 89,50 |
500 - 950 | € 1,58 | € 79,00 |
1000 - 4950 | € 1,45 | € 72,50 |
5000+ | € 1,19 | € 59,50 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Serie
STripFET II
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.3mm
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.