Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-65 °C
Inaltime
9.3mm
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 63,70
€ 6,37 Each (Supplied in a Tube) (fara TVA)
€ 75,80
€ 7,58 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 63,70
€ 6,37 Each (Supplied in a Tube) (fara TVA)
€ 75,80
€ 7,58 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
10 - 99 | € 6,37 |
100 - 499 | € 5,05 |
500 - 999 | € 4,46 |
1000+ | € 3,71 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-65 °C
Inaltime
9.3mm
Detalii produs