Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Latime
9.35mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-65 °C
Forward Diode Voltage
1.5V
Inaltime
4.37mm
€ 27,60
€ 5,52 Buc. (Livrat pe rola) (fara TVA)
€ 33,40
€ 6,679 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 27,60
€ 5,52 Buc. (Livrat pe rola) (fara TVA)
€ 33,40
€ 6,679 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Latime
9.35mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-65 °C
Forward Diode Voltage
1.5V
Inaltime
4.37mm