Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Latime
9.65mm
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
4.83mm
P.O.A.
1
P.O.A.
1
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Latime
9.65mm
Transistor Material
Si
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
4.83mm