Documente tehnice
Specificatii
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Numar pini
3
Temperatura minima de lucru
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Timp montare
Through Hole
Minimum Gate Threshold Voltage
2V
Temperatura maxima de lucru
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Dimensiune celula
HEXFET
Latime
4.69mm
Tip pachet
TO-220AB
Lungime
10.54mm
Inaltime
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Marca
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Tara de origine
China
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 20) (fara TVA)
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Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 80 | € 0,88 | € 17,60 |
100 - 180 | € 0,66 | € 13,20 |
200 - 480 | € 0,61 | € 12,20 |
500 - 980 | € 0,56 | € 11,20 |
1000+ | € 0,52 | € 10,40 |
Documente tehnice
Specificatii
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Numar pini
3
Temperatura minima de lucru
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Timp montare
Through Hole
Minimum Gate Threshold Voltage
2V
Temperatura maxima de lucru
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Dimensiune celula
HEXFET
Latime
4.69mm
Tip pachet
TO-220AB
Lungime
10.54mm
Inaltime
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Marca
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Tara de origine
China