Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1000 V
Dimensiune celula
C3M
Tip pachet
TO-263-7
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+15 V, +9 V
Latime
9.12mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
SiC
Lungime
10.23mm
Typical Gate Charge @ Vgs
21.5 @ 4/+15 V
Inaltime
4.32mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
4.8V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 13,39
Each (In a Tube of 50) (fara TVA)
€ 15,934
Each (In a Tube of 50) (cu TVA)
50
€ 13,39
Each (In a Tube of 50) (fara TVA)
€ 15,934
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 100 | € 13,39 | € 669,50 |
150 - 200 | € 12,39 | € 619,50 |
250+ | € 11,98 | € 599,00 |
Documente tehnice
Specificatii
Marca
WolfspeedChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1000 V
Dimensiune celula
C3M
Tip pachet
TO-263-7
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+15 V, +9 V
Latime
9.12mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
SiC
Lungime
10.23mm
Typical Gate Charge @ Vgs
21.5 @ 4/+15 V
Inaltime
4.32mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
4.8V