Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Latime
4.65mm
Transistor Material
Si
Lungime
10.51mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
15.49mm
Tara de origine
Taiwan, Province Of China
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,34
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,975
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 3,34
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,975
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 3,34 | € 16,70 |
50 - 120 | € 2,38 | € 11,90 |
125 - 245 | € 2,14 | € 10,70 |
250 - 495 | € 1,89 | € 9,45 |
500+ | € 1,72 | € 8,60 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Latime
4.65mm
Transistor Material
Si
Lungime
10.51mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
15.49mm
Tara de origine
Taiwan, Province Of China
Detalii produs