Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Tip pachet
PowerPAK SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Inaltime
1.12mm
Forward Diode Voltage
1.1V
Dimensiune celula
TrenchFET
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,62
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,928
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 1,62
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,928
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Tip pachet
PowerPAK SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Inaltime
1.12mm
Forward Diode Voltage
1.1V
Dimensiune celula
TrenchFET
Temperatura minima de lucru
-55 °C
Detalii produs