Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Inaltime
1.12mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,85
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,012
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,85
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,012
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Inaltime
1.12mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs