Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.12mm
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.25mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.12mm
Detalii produs