Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Serie
EF Series
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
20.82mm
Tara de origine
China
Detalii produs
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
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Impachetare pentru productie (Tub)
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€ 6,73
Each (Supplied in a Tube) (fara TVA)
€ 8,01
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 6,73 |
10 - 24 | € 6,09 |
25 - 49 | € 5,45 |
50 - 99 | € 5,08 |
100+ | € 4,71 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Serie
EF Series
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
20.82mm
Tara de origine
China
Detalii produs