N-channel MOSFET,IRFR110 4.3A 100V 75pcs
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Tip pachet
D-PAK
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Inaltime
2.39mm
Latime
6.22mm
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P.O.A.
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P.O.A.
1
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Tip pachet
D-PAK
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Inaltime
2.39mm
Latime
6.22mm