Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Latime
9.02mm
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,31
Each (In a Tube of 50) (fara TVA)
€ 2,749
Each (In a Tube of 50) (cu TVA)
50
€ 2,31
Each (In a Tube of 50) (fara TVA)
€ 2,749
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,31 | € 115,50 |
100 - 200 | € 1,91 | € 95,50 |
250+ | € 1,79 | € 89,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Latime
9.02mm
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Detalii produs