Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
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€ 3,70
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€ 3,70
Buc. (cu TVA)
1
Cumpara in pachete mari
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1 - 9 | € 3,11 |
10 - 49 | € 2,63 |
50 - 99 | € 2,50 |
100 - 249 | € 2,33 |
250+ | € 2,15 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs