Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
273 A
Maximum Drain Source Voltage
80 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,42
Buc. (fara TVA)
€ 6,45
Buc. (cu TVA)
1
€ 5,42
Buc. (fara TVA)
€ 6,45
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 4 | € 5,42 |
5 - 9 | € 4,96 |
10 - 24 | € 4,41 |
25 - 49 | € 3,94 |
50+ | € 3,71 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
273 A
Maximum Drain Source Voltage
80 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Detalii produs