Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Tip pachet
DSBGA
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Latime
1.49mm
Transistor Material
Si
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Inaltime
0.28mm
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Tip pachet
DSBGA
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Latime
1.49mm
Transistor Material
Si
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Inaltime
0.28mm