Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Inaltime
1.2mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
Standard
100
P.O.A.
Standard
100
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Inaltime
1.2mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V