Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
600 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
2.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6.1 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
6.6mm
Inaltime
6.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.4V
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P.O.A.
1875
P.O.A.
1875
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
600 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
2.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6.1 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
6.6mm
Inaltime
6.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.4V