Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOIC
Dimensiune celula
STripFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Latime
4mm
Number of Elements per Chip
1
Inaltime
1.25mm
Temperatura minima de lucru
-55 °C
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOIC
Dimensiune celula
STripFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Latime
4mm
Number of Elements per Chip
1
Inaltime
1.25mm
Temperatura minima de lucru
-55 °C