Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerFLAT 8 x 8 HV
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
8.1mm
Lungime
8.1mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
0.9mm
Tara de origine
China
€ 60,20
€ 6,02 Buc. (Livrat pe rola) (fara TVA)
€ 71,64
€ 7,164 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 60,20
€ 6,02 Buc. (Livrat pe rola) (fara TVA)
€ 71,64
€ 7,164 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 18 | € 6,02 | € 12,04 |
20 - 48 | € 5,37 | € 10,74 |
50 - 98 | € 4,78 | € 9,56 |
100+ | € 4,50 | € 9,00 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerFLAT 8 x 8 HV
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
8.1mm
Lungime
8.1mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
0.9mm
Tara de origine
China