Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerFLAT 8 x 8 HV
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
8.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerFLAT 8 x 8 HV
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
8.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China