Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220FP
Dimensiune celula
MDmesh M2
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
11.1mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Number of Elements per Chip
1
Latime
4.8mm
Forward Diode Voltage
1.6V
Inaltime
16.2mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220FP
Dimensiune celula
MDmesh M2
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
11.1mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Number of Elements per Chip
1
Latime
4.8mm
Forward Diode Voltage
1.6V
Inaltime
16.2mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).