Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Tip pachet
M174
Timp montare
Surface Mount
Numar pini
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
24.89mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
26.67mm
Inaltime
4.11mm
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 80,09
Each (In a Tray of 25) (fara TVA)
€ 95,307
Each (In a Tray of 25) (cu TVA)
25
€ 80,09
Each (In a Tray of 25) (fara TVA)
€ 95,307
Each (In a Tray of 25) (cu TVA)
25
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Tip pachet
M174
Timp montare
Surface Mount
Numar pini
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
24.89mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
26.67mm
Inaltime
4.11mm
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.