Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
12 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
0.1mA
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
9.15mm
Dimensiuni
10.4 x 4.6 x 9.15mm
Latime
4.6mm
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Detalii produs
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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P.O.A.
Impachetare pentru productie (Banda)
5
Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
12 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
0.1mA
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
9.15mm
Dimensiuni
10.4 x 4.6 x 9.15mm
Latime
4.6mm
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Detalii produs
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.