Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
314 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
SEMITRANS3
Configuration
Dual Half Bridge
Montare
Panel Mount
Channel Type
N
Numar pini
7
Transistor Configuration
Series
Dimensiuni
106.4 x 61.4 x 30mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Incercati din nou mai tarziu
€ 224,00
Buc. (fara TVA)
€ 266,56
Buc. (cu TVA)
1
€ 224,00
Buc. (fara TVA)
€ 266,56
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 1 | € 224,00 |
2 - 4 | € 204,91 |
5 - 9 | € 177,33 |
10 - 19 | € 156,98 |
20+ | € 147,69 |
Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
314 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
SEMITRANS3
Configuration
Dual Half Bridge
Montare
Panel Mount
Channel Type
N
Numar pini
7
Transistor Configuration
Series
Dimensiuni
106.4 x 61.4 x 30mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.