Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Idss Drain-Source Cut-off Current
25 to 75mA
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
+40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
60 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
3.05 x 2.54 x 1.02mm
Inaltime
1.02mm
Latime
2.54mm
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+175 °C
Lungime
3.05mm
Tara de origine
United Kingdom
Detalii produs
N-channel JFET, Semikron
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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100
Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Idss Drain-Source Cut-off Current
25 to 75mA
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
+40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
60 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
3.05 x 2.54 x 1.02mm
Inaltime
1.02mm
Latime
2.54mm
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+175 °C
Lungime
3.05mm
Tara de origine
United Kingdom
Detalii produs
N-channel JFET, Semikron
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.