Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Inaltime
15.75mm
Latime
4.83mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Maximum Power Dissipation
80 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Tara de origine
China
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P.O.A.
Standard
10
P.O.A.
Standard
10
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Inaltime
15.75mm
Latime
4.83mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Maximum Power Dissipation
80 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Tara de origine
China