Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
8 nC @ 10 V dc
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,27
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,321
Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 0,27
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,321
Buc. (Pe o rola de 2500) (cu TVA)
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
8 nC @ 10 V dc
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs