Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 10,31
Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,269
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 10,31
Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,269
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 10,31 | € 51,55 |
10 - 95 | € 8,89 | € 44,45 |
100 - 245 | € 8,57 | € 42,85 |
250 - 495 | € 8,28 | € 41,40 |
500+ | € 7,99 | € 39,95 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V