Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
384 W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
16.25 x 5.3 x 21.4mm
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-40 °C
Detalii produs
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
384 W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
16.25 x 5.3 x 21.4mm
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-40 °C
Detalii produs
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.