Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Dimensiune celula
NCP81080
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Gate Threshold Voltage
5.4V
Minimum Gate Threshold Voltage
3.4V
Temperatura maxima de lucru
+170 °C
Lungime
5mm
Latime
4mm
Number of Elements per Chip
2
Inaltime
1.5mm
Temperatura minima de lucru
-40 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
Dual N-Channel MOSFET, 8-Pin SOIC onsemi NCP81080DR2G
2500
P.O.A.
Dual N-Channel MOSFET, 8-Pin SOIC onsemi NCP81080DR2G
Informatii indisponibile despre stoc
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Dimensiune celula
NCP81080
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Gate Threshold Voltage
5.4V
Minimum Gate Threshold Voltage
3.4V
Temperatura maxima de lucru
+170 °C
Lungime
5mm
Latime
4mm
Number of Elements per Chip
2
Inaltime
1.5mm
Temperatura minima de lucru
-40 °C