Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
2.9 x 1.3 x 1.04mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.04mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Buc. (Livrat pe rola) (fara TVA)
€ 0,416
Buc. (Livrat pe rola) (cu TVA)
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Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 50 | € 0,35 | € 17,50 |
100 - 950 | € 0,20 | € 10,00 |
1000 - 2950 | € 0,13 | € 6,50 |
3000 - 8950 | € 0,11 | € 5,50 |
9000+ | € 0,11 | € 5,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
2.9 x 1.3 x 1.04mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.04mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.