Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
100 V
Maximum Power Dissipation
1.56 W
Dimensiuni
2.38 x 6.73 x 6.22mm
Temperatura maxima de lucru
+150 °C
Maximum Collector Emitter Saturation Voltage
1.2 V
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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Buc. (Pe o rola de 2500) (cu TVA)
2500
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
100 V
Maximum Power Dissipation
1.56 W
Dimensiuni
2.38 x 6.73 x 6.22mm
Temperatura maxima de lucru
+150 °C
Maximum Collector Emitter Saturation Voltage
1.2 V
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.