Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.6 x 4.7 x 20.6mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Each (In a Tube of 30) (fara TVA)
€ 5,557
Each (In a Tube of 30) (cu TVA)
30
€ 4,67
Each (In a Tube of 30) (fara TVA)
€ 5,557
Each (In a Tube of 30) (cu TVA)
30
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Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 30 | € 4,67 | € 140,10 |
60 - 120 | € 4,37 | € 131,10 |
150 - 270 | € 4,21 | € 126,30 |
300+ | € 4,00 | € 120,00 |
Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.6 x 4.7 x 20.6mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.