Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
5.85mm
Latime
5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
42 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,26
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,499
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 1,26
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,499
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
124 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
5.85mm
Latime
5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
42 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines