Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
90 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Lungime
6.5mm
Inaltime
1.57mm
Latime
3.5mm
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
6.5 x 3.5 x 1.57mm
Temperatura maxima de lucru
+150 °C
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Buc. (Pe o rola de 1000) (cu TVA)
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
90 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Lungime
6.5mm
Inaltime
1.57mm
Latime
3.5mm
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
6.5 x 3.5 x 1.57mm
Temperatura maxima de lucru
+150 °C