Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-12 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
-2.5 V
Maximum Collector Base Voltage
-100 V
Maximum Collector Emitter Saturation Voltage
-2 V
Maximum Collector Cut-off Current
-100 μA, -1 mA
Inaltime
15.95mm
Latime
4.5mm
Maximum Power Dissipation
80 W
Dimensiuni
9.9 x 4.5 x 15.95mm
Temperatura maxima de lucru
+150 °C
Lungime
9.9mm
Detalii produs
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-12 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
-2.5 V
Maximum Collector Base Voltage
-100 V
Maximum Collector Emitter Saturation Voltage
-2 V
Maximum Collector Cut-off Current
-100 μA, -1 mA
Inaltime
15.95mm
Latime
4.5mm
Maximum Power Dissipation
80 W
Dimensiuni
9.9 x 4.5 x 15.95mm
Temperatura maxima de lucru
+150 °C
Lungime
9.9mm
Detalii produs
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.