Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Latime
6.1mm
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Dimensiune celula
NVMFS5C604NL
Temperatura minima de lucru
-55 °C
Inaltime
1.05mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Latime
6.1mm
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Dimensiune celula
NVMFS5C604NL
Temperatura minima de lucru
-55 °C
Inaltime
1.05mm
Detalii produs