Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
5
P.O.A.
5
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V