Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
2
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
25
P.O.A.
25
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
2
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C