Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum Continuous Collector Current
-500 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
-10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Collector Base Voltage
-30 V
Maximum Collector Emitter Saturation Voltage
-1.5 V
Maximum Collector Cut-off Current
-100nA
Inaltime
1.01mm
Latime
1.4mm
Maximum Power Dissipation
300 mW
Temperatura minima de lucru
-55 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Tara de origine
China
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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3000
Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum Continuous Collector Current
-500 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
-10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Collector Base Voltage
-30 V
Maximum Collector Emitter Saturation Voltage
-1.5 V
Maximum Collector Cut-off Current
-100nA
Inaltime
1.01mm
Latime
1.4mm
Maximum Power Dissipation
300 mW
Temperatura minima de lucru
-55 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Tara de origine
China
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.