Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Dimensiuni
4.58 x 3.86 x 4.58mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
4.58mm
Inaltime
4.58mm
Latime
3.86mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Dimensiuni
4.58 x 3.86 x 4.58mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
4.58mm
Inaltime
4.58mm
Latime
3.86mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.