Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Maximum Power Dissipation
65 W
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.28mm
Inaltime
15.75mm
Latime
4.82mm
Dimensiuni
10.28 x 4.82 x 15.75mm
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Maximum Power Dissipation
65 W
Temperatura minima de lucru
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.28mm
Inaltime
15.75mm
Latime
4.82mm
Dimensiuni
10.28 x 4.82 x 15.75mm
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.