Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1.33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
0.33 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1.33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
0.33 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China